The Center is having carried out the basic and applied research in the following directions 4.7 “Hardware components for microelectronics, nanoelectronics, and quantum computers. Materials for micro- and nanoelectronics. Nano- and micro-system engineering. Solid state electronics” and 4.10 “Nanotechnologies, nanobiotechnologies, nanosystems, nanomaterials, nanodiagnostics, nanoelectronics, and nanophotonics” of the Nanotechnology and IT Department of the Russian Academy of Sciences, in accordance with the Program on Basic Research of the Presidium of the Russian Academy of Sciences no. 21 “Grounds of Basic Research of Nanotechnologies and Nanomaterials”, the Research Program of the St. Petersburg Scientific Center of the Russian Academy of Sciences, State Contracts with the Ministry of Science and Higher Education as well as according to commercial contracts and scientific collaboration agreements.
Research of mechanisms of the growth of nanostructures in AlInGaN based wide-band compounds by the metal-organic chemical vapor deposition as well as study of their structural and optical properties.
ИStudy of the light generation and reemission in AlInGaN nanoheterostructures with a set of the quantum wells with various depths. Development of light-emitting nanoheterostructures for UV, blue, and green LEDs as well as for monolithic white LEDs.
Study of the mechanisms to form narrow-gap band nanoheterostructures based on InP, GaSb, InAs, InSb, and their solid solutions by the MOCVD.
Development of the diagnostics of thermal processes in high-power micro- and optoelectronic nanoheterostructure based devices by the IR microscopy. Simulations and experimental study of the thermal processes in high-power light-emitting devices based on semiconductor nanoheterostructures.
Comprehensive study of the degradation mechanisms in high-efficiency LEDs based on the quantum-well nanoheterostructures.